OBSERVATION OF NORMAL-INCIDENCE INTERSUBBAND ABSORPTION IN N-TYPE AL0.09GA0.91SB QUANTUM-WELLS

被引:25
作者
BROWN, ER
EGLASH, SJ
MCINTOSH, KA
机构
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 11期
关键词
D O I
10.1103/PhysRevB.46.7244
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Normal-incidence intersubband absorption has been observed in n-type Al0.09Ga0.91Sb quantum wells, as predicted by our previous calculation. The quantum wells were grown on (100)-GaSb and (100)-GaAs substrates and contain an electron sheet density of approximately 7 x 10(11) cm-2. The electrons occupy a two-dimensional L-point subband having ellipsoidal Fermi surfaces. For 7.0-nm-wide quantum wells, the absorption peak occurs at 870 cm-1 (11.5-mu-m), the peak fractional absorption per quantum well is 0.06%, and the full width at half maximum of the absorption profile is 30 meV. The measured absorption strength is within 12% of the theoretical calculation, which was based on the effective-mass method.
引用
收藏
页码:7244 / 7247
页数:4
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