ROOM-TEMPERATURE ELECTROABSORPTION IN A GEXSI1-X PIN PHOTODIODE

被引：6

作者：

MURTAZA, S ^{[1
]}

MAYER, R ^{[1
]}

RASHED, M ^{[1
]}

KINOSKY, D ^{[1
]}

MAZIAR, C ^{[1
]}

BANERJEE, S ^{[1
]}

TASCH, A ^{[1
]}

CAMPBELL, JC ^{[1
]}

BEAN, JC ^{[1
]}

PETICOLAS, LJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.337431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present room temperature electroabsorption measurements in a Ge0.2Si0.8 pin photodiode, The results appear to be very similar to those reported earlier on GexSi (1-x)/Si multiple quantum wells.

引用

页码：2297 / 2300

页数：4

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