VERY HIGH-SPEED OPERATION OF PLANAR INGAAS/INP PHOTODIODE DETECTORS

被引：5

作者：

TEMKIN, H ^{[1
]}

FRAHM, RE ^{[1
]}

OLSSON, NA ^{[1
]}

BURRUS, CA ^{[1
]}

MCCOY, RJ ^{[1
]}

机构：

[1] AT&T BELL LABS, CRAWFORD HILL LAB, HOLMDEL, NJ 07733 USA

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 23期

关键词：

D O I：

10.1049/el:19860868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1267 / 1269

页数：3

共 8 条

[1] INGAAS PIN PHOTODETECTORS WITH MODULATION RESPONSE TO MILLIMETER WAVELENGTHS [J].

BOWERS, JE ;

BURRUS, CA ;

MCCOY, RJ .

ELECTRONICS LETTERS, 1985, 21 (18) :812-814

[2] MILLIMETER-WAVE-GUIDE-MOUNTED INGAAS PHOTODETECTORS [J].

BOWERS, JE ;

BURRUS, CA ;

MITSCHKE, F .

ELECTRONICS LETTERS, 1986, 22 (12) :633-635

[3] INGAASP P-I-N PHOTO-DIODES WITH LOW DARK CURRENT AND SMALL CAPACITANCE [J].

BURRUS, CA ;

DENTAI, AG ;

LEE, TP .

ELECTRONICS LETTERS, 1979, 15 (20) :655-657

[4] WIDE-BAND FREQUENCY-RESPONSE MEASUREMENT OF PHOTODETECTORS USING OPTICAL HETERODYNE-DETECTION TECHNIQUE [J].

KAWANISHI, S ;

SARUWATARI, M .

ELECTRONICS LETTERS, 1986, 22 (06) :337-338

[5] RELIABILITY OF INGAAS PHOTODIODES FOR SL APPLICATIONS [J].

SAUL, RH ;

CHEN, FS ;

SHUMATE, PW .

AT&T TECHNICAL JOURNAL, 1985, 64 (03) :861-882

[6] CHARACTERIZATION OF FREQUENCY-RESPONSE OF 1.5-MU-M INGAASP DFB LASER DIODE AND INGAAS PIN PHOTODIODE BY HETERODYNE MEASUREMENT TECHNIQUE [J].

SCHIMPE, R ;

BOWERS, JE ;

KOCH, TL .

ELECTRONICS LETTERS, 1986, 22 (09) :453-454

[7]

Stillman G. E., 1982, GaInAsP alloy semiconductors, P121

[8]

WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459

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