PREPARATION OF AIN FILMS BY PLANAR MAGNETRON SPUTTERING SYSTEM WITH FACING 2 TARGETS

被引：11

作者：

TOMINAGA, K

机构：

[1] Faculty of Engineering, The University of Tokushima, 770, Minamijosanjima 2-1, Tokushima, Japan

来源：

VACUUM | 1990年 / 41卷 / 4-6期

关键词：

D O I：

10.1016/0042-207X(90)93896-Q

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A planar magnetron sputtering system with facing two targets was presented and the discharge characteristics were examined for reactive sputtering of Al in N2 gas atmosphere. It was found that the reactive sputtering is possible even at a low gas pressure such as 5 × 10-4 Torr. At a substrate temperature of 250°C, all films obtained were c-axis oriented films where the c-axis is normal to the substrate surface. Even at a substrate temperature of T = 50°C, slightly degraded c-axis oriented films were obtained compared with those at 250°C. © 1990.

引用

页码：1154 / 1156

页数：3

共 7 条

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[7]

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