GIANT BAND BENDING AND INTERFACE FORMATION OF CS/INAS(110) AT ROOM-TEMPERATURE

被引：4

作者：

ARISTOV, VY

MANGAT, PS

SOUKIASSIAN, P

LELAY, G

机构：

[1] UNIV AIX MARSEILLE 1,UFR SCI MAT,F-13331 MARSEILLE,FRANCE

[2] NO ILLINOIS UNIV,DEPT PHYS,DE KALB,IL 60115

[3] CTR ETUD SACLAY,CEA,SERV RECH SURFACES & IRRADIAT MAT,F-91191 GIF SUR YVETTE,FRANCE

来源：

JOURNAL DE PHYSIQUE IV | 1994年 / 4卷 / C9期

关键词：

D O I：

10.1051/jp4:1994939

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show by synchrotron radiation core level photoemission spectroscopy that minute amounts of Cs induce at room temperature a giant jump of the Fermi level into the conduction band when deposited on well-cleaved InAs(110) surfaces. This stage corresponds to a single Cs adsorption site. When more Cs is added a new adsorption site appears while correlatively the band bending gradually decreases. The complete interface formation (electronic structure, chemistry) is followed up to saturation at one monolayer and analyzed in terms of the present models of Schottky barrier formation.

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页码：217 / 220

页数：4

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