THERMOELASTIC ANALYSIS OF GAAS IN LEC GROWTH CONFIGURATION .1. EFFECT OF LIQUID ENCAPSULATION ON THERMAL-STRESSES

被引：46

作者：

MOTAKEF, S ^{[1
]}

WITT, AF ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 80卷 / 01期

关键词：

D O I：

10.1016/0022-0248(87)90521-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：37 / 50

页数：14

共 9 条

[1]

Boley B. A., 1960, THEORY THERMAL STRES

[2] THE THEORY AND PRACTICE OF DISLOCATION REDUCTION IN GAAS AND INP [J].

JORDAN, AS ;

VONNEIDA, AR ;

CARUSO, R .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :555-573

[3] AN EVALUATION OF THE THERMAL AND ELASTIC-CONSTANTS AFFECTING GAAS CRYSTAL-GROWTH [J].

JORDAN, AS .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) :631-642

[4] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR .

BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637

[5]

LEINHARDT JH, 1981, HEAT TRANSFER TXB, P361

[6] IMPURITY EFFECT ON GROWN-IN DISLOCATION DENSITY OF INP AND GAAS CRYSTALS [J].

SEKI, Y ;

WATANABE, H ;

MATSUI, J .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) :822-828

[7] GROWTH PECULIARITIES OF GALLIUM ARSENIDE SINGLE CRYSTALS [J].

STEINEMANN, A ;

ZIMMERLI, U .

SOLID-STATE ELECTRONICS, 1963, 6 (06) :597-&

[8]

THOMAS RN, 1984, SEMICONDUCT SEMIMET, V20, pCH1

[9] LEC GROWTH AND CHARACTERIZATION OF UNDOPED INP CRYSTALS [J].

UEMURA, C ;

SHINOYAMA, S ;

YAMAMOTO, A ;

TOHNO, S .

JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) :591-596

← 1 →