Numerical study of deformation-potential scattering of electrons by optical phonons in a longitudinal magnetic field

A detailed numerical study of the influence of a longitudinal magnetic field on carrier scattering is presented for the simple model of the band structure of a semiconductor and for deformation-potential scattering of carriers by optical phonons. A drifted Maxwellian distribution is used, and parallel electric and magnetic fields of arbitrary magnitude are considered. Interesting results of this study include magnetic-field-induced negative differential mobility, magnetic-field-induced "runaway" in the quantum limit, although not for ordinarily large magnetic fields, and longitudinal magnetoresistance resonances whose amplitudes are quite sensitive to electric field strength.