ANNEALING OF ZINC-DIFFUSED GAAS

被引：25

作者：

TUCK, B

HOUGHTON, AJN

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1981年 / 14卷 / 11期

关键词：

D O I：

10.1088/0022-3727/14/11/022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2147 / 2152

页数：6

共 11 条

[1]

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[2] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J].

CASEY, HC ;

PANISH, MB ;

CHANG, LL .

PHYSICAL REVIEW, 1967, 162 (03) :660-+

[3] SOLUBILITIES + DISTRIBUTION COEFFICIENTS OF ZN IN GAAS + GAP [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (01) :23-&

[4] DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J].

CUNNELL, FA ;

GOOCH, CH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :127-133

[5] ON SOLID-STATE DIFFUSION FROM A LIMITED SOURCE [J].

KADHIM, MAH ;

TUCK, B .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01) :303-310

[6] ISOCONCENTRATION DIFFUSION OF ZINC IN GAAS AT 1000 DEGREES C [J].

KADHIM, MAH ;

TUCK, B .

JOURNAL OF MATERIALS SCIENCE, 1972, 7 (01) :68-&

[7]

Kendall D. L., 1968, SEMICONDUCT SEMIMET, V4

[8] ZN DIFFUSION IN GAAS UNDER CONSTANT AS PRESSURE [J].

LUQUE, A ;

MARTIN, J ;

ARAUJO, GL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) :249-254

[9] ANOMALOUS DIFFUSION PROFILES OF ZINC IN GAAS [J].

TUCK, B ;

KADHIM, MAH .

JOURNAL OF MATERIALS SCIENCE, 1972, 7 (05) :581-&

[10] GAAS-ZN SOLIDUS AT 1000DEGREESC [J].

TUCK, B .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (14) :2061-2073

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