SIGE/SI BIFURCATION OPTICAL ACTIVE SWITCH BASED ON PLASMA DISPERSION EFFECT

被引：18

作者：

GAO, Y ^{[1
]}

LI, GZ ^{[1
]}

LIU, XD ^{[1
]}

LIU, EK ^{[1
]}

ZHANG, XJ ^{[1
]}

LU, XK ^{[1
]}

HU, JH ^{[1
]}

WANG, X ^{[1
]}

机构：

[1] FUDAN UNIV,SURFACE PHYS NATL KEY LAB,SHANGHAI 200433,PEOPLES R CHINA

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 20期

关键词：

OPTICAL SWITCHES; SILICON; SILICON-GERMANIUM; OPTICAL WAVE-GUIDES; SOLID-STATE PLASMA;

D O I：

10.1049/el:19951204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on the plasma dispersion effect of Si1-xGex, 2 x 2 bifurcation optical active switches have been fabricated, in which the Si1-xGex was grown by molecular beam epitaxy. At a 36mA injection current, the device reaches maximum optical switching. The crosstalk is less than -11dB and the insertion loss is 3.8dB. The measured response time is <100ns.

引用

页码：1740 / 1741

页数：2

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