G-R NOISE EXPERIMENTS IN DOUBLE-INJECTION SILICON DIODES OPERATING IN SEMICONDUCTOR REGIME

被引：7

作者：

WORCH, PR

BILGER, HR

机构：

来源：

PHYSICA | 1970年 / 50卷 / 02期

关键词：

D O I：

10.1016/0031-8914(70)90001-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：161 / &

共 8 条

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WORCH, PR ;

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NICOLET, MA .

[3] NOISE AND EQUIVALENT CIRCUIT OF DOUBLE INJECTION [J].

BILGER, HR ;

LEE, DH ;

NICOLET, MA ;

MCCARTER, ER .

[4] G-R NOISE AND ADMITTANCE OF DOUBLE INJECTION DIODES [J].

DRIEDONKS, F .

PHYSICA, 1970, 46 (02) :291-+

[5]

DRIEDONKS F, 1968, P C PHYSICAL ASPECTS

[6] ON DOUBLE INJECTION CURRENT NOISE IN SOLIDS [J].

FAZAKAS, AB ;

FRIEDMAN, A .

PHYSICA STATUS SOLIDI, 1968, 28 (01) :385-&

[7] 2-CARRIER SPACE-CHARGE-LIMITED CURRENT IN A TRAP-FREE INSULATOR [J].

PARMENTER, RH ;

RUPPEL, W .

[8]

WORCH PR, 1970, THESIS OKLAHOMA STAT