POSITRON BEAM DEFECT PROFILING OF SILICON EPITAXIAL LAYERS

被引：32

作者：

SCHUT, H ^{[1
]}

VANVEEN, A ^{[1
]}

VANDEWALLE, GFA ^{[1
]}

VANGORKUM, AA ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 06期

关键词：

D O I：

10.1063/1.349329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial layers of silicon grown on a Si(100) substrate by molecular-beam epitaxy (MBE) and solid-phase epitaxy (SPE) have been investigated by slow positron beam analysis methods. Results of Doppler broadening measurements revealed that the S parameter of the SPE material is considerably higher than the value measured for the MBE layer, indicative of a higher concentration of open-volume defects in the former material. This was confirmed by measurements of the positronium fraction at elevated temperatures.

引用

页码：3003 / 3006

页数：4

共 15 条

[1]

Bourgoin J., 1983, POINT DEFECTS SEMICO

[2] EPITHERMAL EFFECTS IN POSITRON DEPTH PROFILING MEASUREMENTS [J].

BRITTON, DT ;

RICEEVANS, PC ;

EVANS, JH .

PHILOSOPHICAL MAGAZINE LETTERS, 1988, 57 (03) :165-169

[3] POSITRON DIFFUSION IN MO - THE ROLE OF EPITHERMAL POSITRONS [J].

HUOMO, H ;

VEHANEN, A ;

BENTZON, MD ;

HAUTOJARVI, P .

PHYSICAL REVIEW B, 1987, 35 (15) :8252-8255

[4]

KEIONEN J, 1987, PHYS REV B, V36, P1344

[5] SLOW POSITRONS IN METAL SINGLE-CRYSTALS .1. POSITRONIUM FORMATION AT AG(100), AG(111), AND CU(111) SURFACES [J].

LYNN, KG ;

WELCH, DO .

PHYSICAL REVIEW B, 1980, 22 (01) :99-110

[6]

MacKenzie I. K., 1983, POSITRON SOLID STATE

[7] TRANSMISSION OF 1-6-KEV POSITRONS THROUGH THIN METAL-FILMS [J].

MILLS, AP ;

WILSON, RJ .

PHYSICAL REVIEW A, 1982, 26 (01) :490-500

[8] INTERACTION OF POSITRON BEAMS WITH SURFACES, THIN-FILMS, AND INTERFACES [J].

SCHULTZ, PJ ;

LYNN, KG .

REVIEWS OF MODERN PHYSICS, 1988, 60 (03) :701-779

[9] DEFECTS AND IMPURITIES AT THE SI/SI(100) INTERFACE STUDIED WITH MONOENERGETIC POSITRONS [J].

SCHULTZ, PJ ;

TANDBERG, E ;

LYNN, KG ;

NIELSEN, B ;

JACKMAN, TE ;

DENHOFF, MW ;

AERS, GC .

PHYSICAL REVIEW LETTERS, 1988, 61 (02) :187-190

[10]

SCHUT H, UNPUB

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