PROPERTIES OF DIFFUSED PBSNSE HOMOJUNCTION DIODE-LASERS

被引：11

作者：

GRISAR, R ^{[1
]}

RIEDEL, WJ ^{[1
]}

PREIER, HM ^{[1
]}

机构：

[1] AEG TELEFUNKEN, FORSCHUNGSINST, FRANKFURT, FED REP GER

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 05期

关键词：

D O I：

10.1109/JQE.1981.1071169

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：586 / 592

页数：7

共 11 条

[1]

ASBECK PM, 1975, THESIS MASSACHUSETTS

[2]

FIEDLER F, 1978, THESIS RWTH AACHEN

[3]

HEIME A, UNPUBLISHED

[4] PB1-XSNXTE-PBTE1-YSEY LATTICE-MATCHED BURIED HETEROSTRUCTURE LASERS WITH CW SINGLE-MODE OUTPUT [J].

KASEMSET, D ;

ROTTER, S ;

FONSTAD, CG .

ELECTRON DEVICE LETTERS, 1980, 1 (05) :75-78

[5] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].

LASHER, G ;

STERN, F .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&

[6] HOMOJUNCTION LEAD-TIN-TELLURIDE DIODE-LASERS WITH INCREASED FREQUENCY TUNING RANGE [J].

LO, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :591-595

[7] SUBLIMATION GROWTH OF PBSE CRYSTALS WITH CONTROLLED CARRIER CONCENTRATION [J].

MAIER, H ;

DANIEL, DR ;

PREIER, H .

JOURNAL OF CRYSTAL GROWTH, 1976, 35 (02) :121-126

[8] BAND INVERSION OF PB1-XSNXSE ALLOYS UNDER HYDROSTATIC-PRESSURE .1. THEORETICAL BAND-STRUCTURE ANALYSIS [J].

MARTINEZ, G .

PHYSICAL REVIEW B, 1973, 8 (10) :4678-4685

[9] RECENT ADVANCES IN LEAD-CHALCOGENIDE DIODE-LASERS [J].

PREIER, H .

APPLIED PHYSICS, 1979, 20 (03) :189-206

[10]

RIEDEL W, UNPUBLISHED

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