DEAD LAYERS ON SEMICONDUCTOR DETECTORS FOR CHARGED-PARTICLE SPECTROSCOPY

被引：8

作者：

PROTIC, D

RIEPE, G

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1972年 / 101卷 / 01期

关键词：

D O I：

10.1016/0029-554X(72)90756-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：55 / +

页数：1

共 13 条

[1]

[Anonymous], 1968, SEMICONDUCTOR DETECT

[2]

BALDINGER E, 1970, P S SEMICONDUCTOR DE, P9

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FOX, RJ ;

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TODD, HA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (03) :279-+

[4] A FURTHER NOTE ON ION IMPLANTED GERMANIUM DETECTORS [J].

DEARNALEY, G ;

HARDACRE, AG .

NUCLEAR INSTRUMENTS & METHODS, 1970, 82 :187-+

[5] ION IMPLANTED GERMANIUM PARTICLE DETECTORS [J].

DEARNALEY, G ;

HARDACRE, AG ;

ROGERS, BD .

NUCLEAR INSTRUMENTS & METHODS, 1969, 71 (01) :86-+

[6] WINDOW THICKNESS AND RECTIFYING PROCESS IN SURFACE BARRIER DETECTORS [J].

FORCINAL, G ;

SIFFERT, P ;

COCHE, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (03) :275-+

[7]

GOULDING FS, 1966, UCRL16480 REP

[8] LITHIUM-DRIFTED GERMANIUM FOR CHARGED PARTICLE SPECTROSCOPY [J].

GRUHN, CR ;

KUO, T ;

MAGGIORE, C ;

PREEDOM, B ;

SAMUELSON, L ;

CHANDER, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (03) :337-+

[9]

KUHN A, 1969, HALBLEITER KRISTALLZ

[10] GEOMETRIC CONTROL OF SURFACE LEAKAGE CURRENT AND NOISE IN LITHIUM DRIFTED SILICON RADIATION DETECTORS [J].

LLACER, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (01) :93-+

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