CATHODOLUMINESCENCE STUDIES OF THE 1.4 EV BANDS IN VAPOR-PHASE-GROWN CDTE

被引：9

作者：

NORRIS, CB

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 03期

关键词：

D O I：

10.1007/BF02652932

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：499 / 512

页数：14

共 11 条

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ZANIO, K .

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[2] EFFECT OF THERMAL NEUTRON-INDUCED DAMAGE ON PHOTOLUMINESCENCE IN CDTE [J].

BARNES, CE ;

KIKUCHI, C .

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[3]

CURIE D, 1967, PHYSICS CHEMISTRY 2, P445

[4] CATHODOLUMINESCENCE STUDIES OF ANOMALOUS ION-IMPLANTATION DEFECT INTRODUCTION IN CDTE [J].

NORRIS, CB ;

BARNES, CE ;

ZANIO, KR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1659-1667

[5] DEPTH-RESOLVED CATHODOLUMINESCENCE IN UNDAMAGED AND ION-IMPLANTED GAAS, ZNS, AND CDS [J].

NORRIS, CB ;

BARNES, CE ;

BEEZHOLD, W .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3209-3221

[6] CATHODOLUMINESCENCE STUDIES OF 1.4 EV-BANDS IN CDTE [J].

NORRIS, CB ;

BARNES, CE .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :219-227

[7]

NORRIS CB, 1977, J LUMIN, V16, P297

[8]

STRAUSS AJ, 1971, P INT S CDTE

[9]

TAGUCHI T, 1972 DEFECTS SEMICON, P407

[10]

TAGUCHI T, 1973, LUMINESCENCE CRYSTAL, P258

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