PRACTICAL ASPECTS OF ION-BEAM ANALYSIS OF SEMICONDUCTOR STRUCTURES

被引：5

作者：

FREY, L ^{[1
]}

PICHLER, P ^{[1
]}

KASKO, I ^{[1
]}

THIES, I ^{[1
]}

LIPP, S ^{[1
]}

STRECKFUSS, N ^{[1
]}

GONG, L ^{[1
]}

RYSSEL, H ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,LEHRSTUHL ELEKTR BAUELEMENTE,D-91058 ERLANGEN,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 85卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)95844-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Analytical techniques applied for semiconductor characterization have to be suitable for analyzing structured multilayer systems. High detection sensitivity has to be available together with high vertical and lateral resolution. Analytical methods based on ion beams are among the most frequently used techniques applied for semiconductor diagnostic. In this paper the application of ion beam analysis for characterization of multilayer systems, for profiling of shallow elemental distributions, and for analysis of device structures will be discussed. Special emphasis will be put on fast, routine type measurements. The application of alternative methods based on electron beam - or X-ray analysis will also be shown.

引用

页码：356 / 362

页数：7

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