A NOVEL DELINEATION TECHNIQUE FOR 2D-PROFILING OF DOPANTS IN CRYSTALLINE SILICON

被引：6

作者：

GONG, L ^{[1
]}

FREY, L ^{[1
]}

BOGEN, S ^{[1
]}

RYSSEL, H ^{[1
]}

机构：

[1] FRAUNHOFER ARBEITSGRP INTEGRIERTE SCHALTUNGEN,W-8520 ERLANGEN,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 74卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(93)95040-C

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

An optimized delineation technique for the measurement of two-dimensional diffusion and implantation profiles has been developed. Up to three equi-concentration lines of a dopant distribution can be made visible on one sample by using this technique. Both, the lateral and vertical distribution under the mask edge are magnified by SEM. The asymmetrical effects of ion implantation and the depth dependent lateral spread of implanted ions can also be seen clearly.

引用

页码：186 / 190

页数：5

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