ORIGIN OF EFFECTIVE CHARGES OF AMORPHOUS SILICON AND GERMANIUM

被引：7

作者：

KLUG, DD ^{[1
]}

WHALLEY, E ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,DIV CHEM,OTTAWA K1A 0R9,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.15.2091

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2091 / 2098

页数：8

共 20 条

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[8] LATTICE BANDS IN GERMANIUM
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[10] KLUG DD, UNPUBLISHED RESULTS