NEGATIVE RESISTANCE IN SEMICONDUCTOR DEVICES

被引：9

作者：

BURGESS, RE

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1960年 / 38卷 / 03期

关键词：

D O I：

10.1139/p60-038

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：369 / 375

页数：7

共 12 条

[1] HIGH INVERSE VOLTAGE GERMANIUM RECTIFIERS [J].

BENZER, S .

JOURNAL OF APPLIED PHYSICS, 1949, 20 (08) :804-815

[2] THE AC ADMITTANCE OF TEMPERATURE-DEPENDENT CIRCUIT ELEMENTS [J].

BURGESS, RE .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (10) :766-774

[3] STATISTICAL THEORY OF AVALANCHE BREAKDOWN IN SILICON [J].

BURGESS, RE .

CANADIAN JOURNAL OF PHYSICS, 1959, 37 (06) :730-738

[4] THE TURNOVER PHENOMENON IN THERMISTORS AND IN POINT-CONTACT GERMANIUM RECTIFIERS [J].

BURGESS, RE .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (11) :908-917

[5]

BURGESS RE, 1955, J ELECTRONICS, V3, P297

[6]

CUTLER M, 1957, IRE T ELECTRON DEV, V4, P201

[7] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].

ESAKI, L .

PHYSICAL REVIEW, 1958, 109 (02) :603-604

[8] THERMAL OSCILLATIONS IN N-GERMANIUM AT LOW TEMPERATURE [J].

KOENIG, SH ;

BROWN, RD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) :201-203

[9] THE CRYOSAR - A NEW LOW-TEMPERATURE COMPUTER COMPONENT [J].

MCWHORTER, AL ;

REDIKER, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (07) :1207-1213

[10] PROPERTIES OF SEMICONDUCTIVE BARIUM TITANATES [J].

SABURI, O .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1959, 14 (09) :1159-1174

← 1 2 →