IN-DEPTH PROFILES OF PHOSPHORUS ION-IMPLANTED SILICON BY AUGER SPECTROSCOPY AND SECONDARY ION EMISSION

[1] Castaing R., 1962, J MICROSCOPIE, V1, P395

[2] DEARNALEY G, 1971, 2 P INT C ION IMPL S, P439

[3] JOHNSON WS, 1969, PROJECTED RANGE STAT

[4] Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

[5] ION-IMPLANTED PHOSPHOROUS IN SILICON - PROFILES USING C-V ANALYSIS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3553 - &

[6] MORABITO JM, 1972, 10 ANN VAR VAC TECHN

[7] MORABITO JM, 1971, 10 NATL M SOC APPL S

[8] PALMBERG PW, 1971, 5 INT VAC C BOST

[9] Shannon J. M., 1970, Radiation Effects, V6, P217, DOI 10.1080/00337577008236300

[10] TOKUYAMA T, 1970, 4 P MICR C MUN, P36

[1] Castaing R., 1962, J MICROSCOPIE, V1, P395

[2] DEARNALEY G, 1971, 2 P INT C ION IMPL S, P439

[3] JOHNSON WS, 1969, PROJECTED RANGE STAT

[4] Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

[5] ION-IMPLANTED PHOSPHOROUS IN SILICON - PROFILES USING C-V ANALYSIS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3553 - &

[6] MORABITO JM, 1972, 10 ANN VAR VAC TECHN

[7] MORABITO JM, 1971, 10 NATL M SOC APPL S

[8] PALMBERG PW, 1971, 5 INT VAC C BOST

[9] Shannon J. M., 1970, Radiation Effects, V6, P217, DOI 10.1080/00337577008236300

[10] TOKUYAMA T, 1970, 4 P MICR C MUN, P36