SURFACE CARRIER GENERATION INCLUDING TUNNEL TRANSITIONS

被引：6

作者：

PREIER, H

机构：

[1] Research and Development Laboratories, Sprague Electric Company, North Adams

来源：

SURFACE SCIENCE | 1969年 / 17卷 / 01期

关键词：

D O I：

10.1016/0039-6028(69)90219-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An expression for the surface generation rate of electrons and holes was derived for the case of saturation generation including tunnel transitions of carriers from the semiconductor conduction band (or valence band) to the surface states. For the special case of non-equilibrium deep depletion, the recombination velocity was calculated as a function of silicon substrate doping concentration. The theoretical curve is in good agreement with the experimental data of Fitzgerald and Grove3). © 1969.

引用

页码：125 / &