EXCITON DIFFUSION IN CDSE

被引:31
作者
ERLAND, J [1 ]
RAZBIRIN, BS [1 ]
PANTKE, KH [1 ]
LYSSENKO, VG [1 ]
HVAM, JM [1 ]
机构
[1] AF IOFFE PHYS TECH INST,POLITEKHNICHESKAYA 26,ST PETERSBURG 194021,RUSSIA
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 07期
关键词
D O I
10.1103/PhysRevB.47.3582
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In transient laser-induced grating experiments, the diffusion coefficients and lifetimes of free excitons are determined in CdSe at temperatures between 2 and 40 K and for different densities. We find that the diffusion coefficient D decreases and that the recombination lifetime T1 increases with increasing temperature. The increase of T1 with temperature is due to the release of excitons bound to impurities and to an increase of the radiative lifetime. From the measured D values for motion parallel and perpendicular to the crystal c axis, we extract momentum relaxation rates which are discussed in terms of exciton-acoustic-phonon scattering. In pure samples, and for lattice temperatures T < 10 K, the interaction via the deformation potential is dominating, while for higher temperatures, the interaction via the piezoelectric potential becomes significant.
引用
收藏
页码:3582 / 3587
页数:6
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