HIGH-POWER 1.02-MU-M INGAAS ALGAAS STRAINED QUANTUM-WELL LASERS WITH GAINP BURIED WAVE-GUIDES FOR PUMPING PR3+-DOPED OPTICAL-FIBER AMPLIFIER

被引：8

作者：

FUKAGAI, K

CHIDA, H

ISHIKAWA, S

FUJII, H

ENDO, K

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki, 305, 34, Miyukigaoka

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 02期

关键词：

SEMICONDUCTOR LASERS; OPTICAL FIBERS; AMPLIFIERS;

D O I：

10.1049/el:19930098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High power 1.02 mum single spatial mode laser diodes with low-loss (3.3 cm-1) GaInP buried waveguides have been developed for pumping Pr3+-doped optical fibre amplifiers. A maximum CW light output power of 415 mW and an optical fibre output of 71 mW at 200 mA have been achieved. A preliminary lifetest showed stable operation for over 2300 h under 100 mW CW conditions at 50-degrees-C.

引用

页码：146 / 147

页数：2

共 8 条

[1] OPERATING CHARACTERISTICS OF INGAAS/AIGAAS STRAINED SINGLE QUANTUM WELL LASERS [J].