ANOMALOUS DEFECT PROCESSES IN SILICON-IMPLANTED SIO2

被引：10

作者：

FUJITA, T ^{[1
]}

FUKUI, M ^{[1
]}

OKADA, S ^{[1
]}

SHIMIZU, T ^{[1
]}

ITOH, N ^{[1
]}

机构：

[1] NAKANIHON AUTOMOT COLL, SAKAHOGI, GIFU 505, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 07期

关键词：

D O I：

10.1143/JJAP.28.L1254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1254 / L1257

页数：4

共 13 条

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[2] CHENGRU S, 1988, J NONCRYST SOLIDS, V104, P85
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[4] INFLUENCE OF IONIZING-RADIATION ON PREDAMAGED, AMORPHOUS SIO2
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[5] Frieble E.J., 1979, TREATISE MAT SCI TEC, V17, P257
[6] ELECTRON-PARAMAGNETIC RESONANCE STUDIES OF DEFECTS IN SILICON-IMPLANTED SIO2
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ITOH, N
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[7] CHARACTERIZATION OF 3 E'-CENTER VARIANTS IN X-IRRADIATED AND GAMMA-IRRADIATED HIGH-PURITY A-SIO2
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) : 481 - 488
[8] E' CENTER IN GLASSY SIO2 - MICROWAVE SATURATION PROPERTIES AND CONFIRMATION OF THE PRIMARY SI-29 HYPERFINE-STRUCTURE
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[J]. PHYSICAL REVIEW B, 1979, 20 (05): : 1823 - 1834
[9] EFFECTS OF IONIZING-RADIATION ON AMORPHOUS INSULATORS
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 65 (1-4): : 63 - 72
[10] DIPOLAR BROADENING OF MAGNETIC RESONANCE LINES IN MAGNETICALLY DILUTED CRYSTALS
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[J]. PHYSICAL REVIEW, 1953, 90 (02): : 238 - 239

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