CONTACTLESS ELECTRICAL CHARACTERIZATION AND REALIZATION OF P-TYPE ZNSE

被引：27

作者：

FARRELL, HH

TAMARGO, MC

GMITTER, TJ

WEAVER, AL

ASPNES, DE

机构：

[1] Bellcore, Red Bank

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 02期

关键词：

D O I：

10.1063/1.349687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSe is a potentially useful optoelectronic material for applications requiring emission in the blue region of the spectrum. However, such applications necessitate the development of p-type material, for which reliable ohmic-contact technology does not exist. To avoid difficulties associated with contact formation while developing p-type material, we combine two contactless methods, reflectance-difference spectroscopy and inductive-coupled radio-frequency loss to determine carrier type and sheet resistance, respectively. Using this information we have prepared conducting p-type ZnSe by doping the material during growth with Li.

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页码：1033 / 1035

页数：3

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