LINEAR TERMS IN (Q)OVER-RIGHT-ARROW IN THE MACROSCOPIC OPTICAL-PROPERTIES DF ZINCBLENDE TYPE MATERIALS - THEORY AND EXPERIMENT

被引:14
作者
ETCHEGOIN, P
FAINSTEIN, A
SANTOS, P
VOON, LCLY
CARDONA, M
机构
[1] Max-Planck-Institut für Festkörperforschung, D-70569 Stuttgart
关键词
SEMICONDUCTORS; DIELECTRIC RESPONSE; OPTICAL PROPERTIES; LIGHT ABSORPTION AND REFLECTION;
D O I
10.1016/0038-1098(94)90487-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Situations under which off-diagonal symmetric or antisymmetric terms in the dielectric tenser epsilon(ij)(omega, q ($) over bar) of zincblende-type materials, proportional to the wavevector of the light q ($) over bar; may exist are reviewed and clarified. Off-diagonal linear terms in q ($) over bar have been associated with macroscopic effects on the polarization of the light of two different kinds: optical activity (antisymmetric) and gyrotropic birefringence (symmetric). Contrary to recent reports concerning GaAs, we show that gyrotropic birefringence caused by the symmetric off-diagonal linear terms in the dielectric tensor does not exist in bulk crystals under equilibrium conditions. Any such reported effects should be attributed to residual internal stress or surface effects.
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页码:505 / 510
页数:6
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