BAND-TO-BAND TUNNEL PROCESSES IN HGCDTE - COMPARISON OF EXPERIMENTAL AND THEORETICAL-STUDIES

被引：35

作者：

BLANKS, DK

BECK, JD

KINCH, MA

COLOMBO, L

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.575508

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2790 / 2794

页数：5

共 9 条

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[4] ELECTRONIC-PROPERTIES OF HGCDTE [J].

KINCH, MA .

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[5]

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[6]

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[7]

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[9] SMOOTHING AND DIFFERENTIATION OF DATA BY SIMPLIFIED LEAST SQUARE PROCEDURE [J].

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