IMPACT IONIZATION IN SEMICONDUCTORS - EFFECTS OF HIGH ELECTRIC-FIELDS AND HIGH SCATTERING RATES

被引：80

作者：

BUDE, J ^{[1
]}

HESS, K ^{[1
]}

IAFRATE, GJ ^{[1
]}

机构：

[1] USA, RES OFF, RES TRIANGLE PK, NC 27709 USA

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.45.10958

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a theory of impact ionization in semiconductors that expands an earlier theory of Kane and includes the effects of high electric fields and high scattering rates on the electron-electron collision process. We show that their combined effect, i.e., the intracollisional field effect and collision broadening, leads to a softening of the threshold energy for impact ionization and a marked increase in the anisotropy of the ionization rate with respect to the direction of the electric field.

引用

页码：10958 / 10964

页数：7

共 17 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].