FIELD INDUCED PHOTOEMISSION AND HOT-ELECTRON EMISSION FROM GERMANIUM

[1] ELECTRON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (05): : 1342 - 1343

[2] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[3] SOME EXPERIMENTS ON, AND A THEORY OF, SURFACE BREAKDOWN [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) : 299 - 306

[4] Koc S., 1957, CECHOSL J PHYS, V7, P91

[5] SIMON RE, UNPUB PHYS REV

[6] SPICER WE, UNPUB

[7] SPICER WE, 1960, B AM PHYS SOC, V5, P69

[8] Vavilov V. S., 1958, ZH EKSP TEOR FIZ+, V34, P521

[1] ELECTRON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (05): : 1342 - 1343

[2] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[3] SOME EXPERIMENTS ON, AND A THEORY OF, SURFACE BREAKDOWN [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) : 299 - 306

[4] Koc S., 1957, CECHOSL J PHYS, V7, P91

[5] SIMON RE, UNPUB PHYS REV

[6] SPICER WE, UNPUB

[7] SPICER WE, 1960, B AM PHYS SOC, V5, P69

[8] Vavilov V. S., 1958, ZH EKSP TEOR FIZ+, V34, P521