SPIN-DEPENDENT CONDUCTIVITY OF PHOSPHORUS-DOPED SILICON IN INTERMEDIATE CONCENTRATION REGION

被引:21
作者
MORIGAKI, K [1 ]
ONDA, M [1 ]
机构
[1] UNIV TOKYO,INST SOLID STATE PHYS,ROPPONGI 106,TOKYO,JAPAN
关键词
D O I
10.1143/JPSJ.36.1049
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1049 / 1057
页数:9
相关论文
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