SUPER-SCHOTTKY DIODE

被引：25

作者：

VERNON, FL ^{[1
]}

MILLEA, MF ^{[1
]}

BOTTJER, MF ^{[1
]}

SILVER, AH ^{[1
]}

PEDERSEN, RJ ^{[1
]}

MCCOLL, M ^{[1
]}

机构：

[1] AEROSP CORP,ELECTR RES LAB,EL SEGUNDO,CA 90245

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1977年 / 25卷 / 04期

关键词：

D O I：

10.1109/TMTT.1977.1129092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：286 / 294

页数：9

共 23 条

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[2]

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[5] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

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[6] LOW-NOISE ROOM-TEMPERATURE AND CRYOGENIC MIXERS FOR 80-120 GHZ [J].

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, 23 (10) :781-787

[7]

KERR AR, 1975, IEEE MTT S INT MICRO, P318

[8] SCHOTTKY BARRIERS ON INSB [J].

MCCOLL, M ;

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JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) :191-207

[9] SUPER-SCHOTTKY DIODE MICROWAVE MIXER [J].

MCCOLL, M ;

PEDERSEN, RJ ;

BOTTJER, MF ;

MILLEA, MF ;

SILVER, AH ;

VERNON, FL .

APPLIED PHYSICS LETTERS, 1976, 28 (03) :159-162

[10] SUPERCONDUCTOR-SEMICONDUCTOR SCHOTTKY-BARRIER DIODE DETECTOR [J].

MCCOLL, M ;

MILLEA, MF ;

SILVER, AH .

APPLIED PHYSICS LETTERS, 1973, 23 (05) :263-264

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