SCHOTTKY BARRIERS ON INSB

被引：10

作者：

MCCOLL, M ^{[1
]}

MILLEA, MF ^{[1
]}

机构：

[1] AEROSP CORP, EL SEGUNDO, CA 90245 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 02期

关键词：

D O I：

10.1007/BF02652903

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：191 / 207

页数：17

共 30 条

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[8]

KORWINPAWLOWSKI ML, 1974, METAL SEMICONDUCTOR, P255

[9] POWER LAW REVERSE CURRENT-VOLTAGE CHARACTERISTIC IN SCHOTTKY BARRIERS [J].

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