ELECTRON-PHONON INTERACTIONS IN INSB JUNCTIONS

被引：17

作者：

CAVENETT, BC

机构：

来源：

PHYSICAL REVIEW B | 1972年 / 5卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.5.3049

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3049 / &

共 41 条

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[3] CAVENETT BC, 1969, B AM PHYS SOC, V14, P414
[4] CAVENETT BC, UNPUBLSIHED
[5] ELECTRON TUNNELING FROM METAL TO INSB - (SEMICONDUCTOR BAND STRUCTURE - 4.2 DEGREES - MOS STRUCTURES - SINGLE CRYSTALS - E/T)
CHANG, LL
ESAKI, L
JONA, F
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (01) : 21 - &
[6] PHONON-ASSISTED TUNNELING IN SILICON AND GERMANIUM ESAKI JUNCTIONS
CHYNOWETH, AG
THOMAS, DE
LOGAN, RA
[J]. PHYSICAL REVIEW, 1962, 125 (03): : 877 - &
[7] EFFECT OF LANDAU LEVELS UPON TUNNEL CURRENTS IN INDIUM ANTIMONIDE
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LOGAN, RA
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[J]. PHYSICAL REVIEW LETTERS, 1960, 5 (12) : 548 - 550
[8] INTERNAL FIELD EMISSION AT NARROW P-N JUNCTIONS IN INDIUM ANTIMONIDE
CHYNOWETH, AG
LOGAN, RA
[J]. PHYSICAL REVIEW, 1960, 118 (06): : 1470 - 1473
[9] THEORY OF POLAR PHONON ASSISTED TUNNELING
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HAERING, RR
MILLER, PB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAY) : 501 - &
[10] ELESIN VF, 1966, SOV PHYS JETP-USSR, V23, P917