HOT ELECTRON MAGNETOPHONON EFFECT IN N-TYPE EPITAXIAL FILMS OF GAAS

被引:32
作者
STRADLING, RA
WOOD, RA
机构
关键词
D O I
10.1016/0038-1098(68)90568-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:701 / +
页数:1
相关论文
共 12 条
[1]  
CONWELL EM, 1967, SOLID STATE PHYSIC S, V9, P14
[2]  
HARDY JR, 1962, PHYSICS SEMICONDUCTO, P521
[3]  
KOTERA N, 1966, J PHYS SOC JPN, VS 21, P411
[4]  
KOTERA N, 1966, P INT C PHYS SEMICON, P411
[5]  
MEARS AL, TO BE PUBLISHED
[6]  
POMORTSE.RV, 1967, FIZ TVERD TELA+, V9, P1150
[7]   IMPACT IONIZATION BREAKDOWN OF N-TYPE EPITAXIAL GAAS AT LIQUID HELIUM TEMPERATURES [J].
REYNOLDS, RA .
SOLID-STATE ELECTRONICS, 1968, 11 (04) :385-&
[8]  
SEITZ, 1967, SOLID STATE PHY S ED, V9, P14
[9]  
SHALYT SS, 1964, SOV PHYS-SOL STATE, V6, P508
[10]  
STRADLING RA, TO BE PUBLISHED