OPTICALLY INDUCED ABSORPTION MODULATION IN A PERIODICALLY DELTA-DOPED INGAAS/GAAS MULTIPLE QUANTUM-WELL STRUCTURE

被引：25

作者：

LARSSON, A

MASERJIAN, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 18期

关键词：

D O I：

10.1063/1.105027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong optically induced absorption modulation has been achieved in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. The use of delta-doping has enabled efficient modulation in short-period structures using a low-power semiconductor laser. With an excitation intensity of 100 mW/cm2 we have measured an absolute quantum well absorption change of more than 9000 cm-1 corresponding to a differential absorption change as high as 58% at the excitonic resonance.

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页码：1946 / 1948

页数：3

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