HIGH-PERFORMANCE RESONANT TUNNELING STRUCTURES ON GAAS SUBSTRATES

被引：14

作者：

RIECHERT, H

BERNKLAU, D

REITHMAIER, JP

SCHNELL, RD

机构：

[1] Siemens Research Laboratories, M'unchen 83

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 05期

关键词：

Gallium arsenide; Semiconductor devices and materials; Tunnelling;

D O I：

10.1049/el:19900223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs-based resonant tunnelling structures of high quality were grown by molecular beam epitaxy. Room temperature peak-to-valley ratios of 4.8 for a GaAs/AlGaAs double barrier quantum well, 4.1 for GaAs/AlGaAs with InGaAs quantum well and 5.9 for GaAs/AlGaAs with adjacent InGaAs ‘prewell’ were obtained, in connection with reasonable peak current densities. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：340 / 342

页数：3