EPITAXIAL Tl2Ba2Ca2Cu3O10 FILMS WITH VERY LOW MICROWAVE SURFACE RESISTANCE UP TO 110 K

被引：27

作者：

Holstein, W. L. ^{[1
]}

Parisi, L. A. ^{[1
]}

Wilker, C. ^{[1
]}

Flippen, R. B. ^{[1
]}

机构：

[1] Dupont Co, Cent Res & Dev, POB 80304, Wilmington, DE 19880 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Very low surface resistance epitaxial Tl2Ba2Ca2Cu3O10 films have been prepared on one or both sides of (100) LaAlO3 substrates up to 5 cm (2 inches) in diameter. The T-c of the films was 120.5 +/- 0.5 K as measured by ac magnetic susceptibility. Surface resistance at 10 GHz measured with an HTS-sapphire resonator was 24 +/- 10 mu Omega at 4.2 K, 181 +/- 10 mu Omega at 77 K, and 359 +/- 20 mu Omega at 100 K. Identical T-c and surface resistance were observed for films prepared on both sides of substrates. A microstrip resonator prepared from a double side-coated film on a LaAlO3 substrate exhibited an unloaded Q-value of 7200 at 100 K and 8.7 GHz and continued to demonstrate performance superior to similar copper resonators even at 115 K. This is the highest temperature reported to date for operation of a superconducting device.

引用

页码：1197 / 1200

页数：4

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