ELECTRONIC-STRUCTURE OF STRAINED SIN/GEN(001) SUPERLATTICES

被引：3

作者：

CIRACI, S ^{[1
]}

GULSEREN, O ^{[1
]}

ELLIALTIOGLU, S ^{[1
]}

机构：

[1] MIDDLE E TECH UNIV,DEPT PHYS,ANKARA 06531,TURKEY

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 11期

关键词：

SEMICONDUCTING GERMANIUM COMPOUNDS - Electronic Properties;

D O I：

10.1016/0038-1098(88)90078-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using the empirical tight binding method, we have investigated the electronic properties of the Si//n/Ge//n(001) strained superlattices as a function of the superlattice periodicity and the band misfit. For n greater than equivalent to 4 we have found that first and second conduction band states are localized in Si. The hole states localized in Ge appear for n greater than equivalent to 4. The difference between the direct and indirect band gaps is reduced from 2. 01 eV for bulk Si to 0. 01 eV for n equals 6 which can be considered to be quasi-direct. For the cases n equals 6 and n equals 8, the band gap might become direct for large values of band misfit.

引用

页码：1285 / 1290

页数：6

共 16 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].