ETCHING STUDIES ON (100) FACES OF MGO CRYSTALS IN H3PO4 ACIDS

被引:10
作者
SANGWAL, K [1 ]
PATEL, TC [1 ]
机构
[1] SARDAR PATEL UNIV,DEPT PHYS,VALLABH VIDYANAGAR 388120,GUJARAT,INDIA
来源
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1978年 / 13卷 / 03期
关键词
D O I
10.1002/crat.19780130307
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:281 / 287
页数:7
相关论文
共 7 条
[1]   ACTIVATION ENERGIES IN CHEMICAL ETCHING OF SEMICONDUCTORS IN HNO3-HF-CH3COOH [J].
BOGENSCHUTZ, AF ;
KRUSEMARK, W ;
LOCHERER, KH ;
MUSSINGER, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :970-+
[2]  
CABRERA N, 1956, J CHEM PHYS, V53, P675
[3]  
GHOSH TK, 1962, BRIT J APPL PHYSICS, V12, P44
[4]   INCOHERENT IMPURITY PRECIPITATES MAGNESIUM OXIDE [J].
HENDERSON, B .
PHILOSOPHICAL MAGAZINE, 1964, 9 (97) :153-&
[5]  
SANGWAL K, 1976, J MATER SCI, V12, P2271
[6]  
SUTARIA JN, 1977, KRISTALLOGRAFIYA+, V22, P1030
[7]  
[No title captured]