ACTIVATION ENERGIES IN CHEMICAL ETCHING OF SEMICONDUCTORS IN HNO3-HF-CH3COOH

[1] ETCHING GE WITH MIXTURES OF HF-H2O2-H2O [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) : 33 - 36

[2] BOGENSCHUTZ AF, 1964, METALLOBERFLACHE, V18, P193

[3] CHEMICAL ETCHING OF GERMANIUM IN HF-HNO3-H2O SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (04) : 341 - 342

[4] A STUDY OF THE ETCHING RATE OF SINGLE-CRYSTAL GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (10) : 586 - 593

[5] DISSOLUTION OF GERMANIUM IN AQUEOUS HYDROGEN PEROXIDE SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (06) : 508 - 512

[6] EUCKEN A, 1949, LEHRBUCH CHEMISCHEN, V2, P910

[7] The reaction rate theory of viscosity and some of its applications [J]. JOURNAL OF APPLIED PHYSICS, 1938, 9 (04) : 252 - 269

[8] Viscosity, plasticity, and diffusion as examples of absolute reaction rates [J]. JOURNAL OF CHEMICAL PHYSICS, 1936, 4 (04) : 283 - 291

[9] ILSCHNER B, 1966, Z METALLKD, V57, P194

[10] CONTROLLED ETCHING OF SILICON IN THE HF-HNO3 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) : 37 - 42

[1] ETCHING GE WITH MIXTURES OF HF-H2O2-H2O [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) : 33 - 36

[2] BOGENSCHUTZ AF, 1964, METALLOBERFLACHE, V18, P193

[3] CHEMICAL ETCHING OF GERMANIUM IN HF-HNO3-H2O SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (04) : 341 - 342

[4] A STUDY OF THE ETCHING RATE OF SINGLE-CRYSTAL GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (10) : 586 - 593

[5] DISSOLUTION OF GERMANIUM IN AQUEOUS HYDROGEN PEROXIDE SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (06) : 508 - 512

[6] EUCKEN A, 1949, LEHRBUCH CHEMISCHEN, V2, P910

[7] The reaction rate theory of viscosity and some of its applications [J]. JOURNAL OF APPLIED PHYSICS, 1938, 9 (04) : 252 - 269

[8] Viscosity, plasticity, and diffusion as examples of absolute reaction rates [J]. JOURNAL OF CHEMICAL PHYSICS, 1936, 4 (04) : 283 - 291

[9] ILSCHNER B, 1966, Z METALLKD, V57, P194

[10] CONTROLLED ETCHING OF SILICON IN THE HF-HNO3 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) : 37 - 42