SINGLE LIQUID SOURCE PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF HIGH-QUALITY YBA2CU3O7-X THIN-FILMS

被引：47

作者：

ZHANG, JM

GARDINER, RA

KIRLIN, PS

BOERSTLER, RW

STEINBECK, J

机构：

[1] Advanced Technology Materials, Inc., Danbury

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 24期

关键词：

D O I：

10.1063/1.108065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality YBa2Cu3O7-x films were grown in situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition (CVD) process. The metalorganic complexes M (thd)n, (thd = 2,2,6,6-tetramethyl-3-5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically Simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O7-x was formed in situ at a substrate temperature 680-degrees-C. The as-deposited films exhibited a mirrorlike surface, bad transition temperature congruent-to T(c0) congruent-to 89 K, DELTA T(c) < 1 K, and J(c) (77 K) = 10(6) A/cm2.

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页码：2884 / 2886

页数：3

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