DELOCALIZATION EFFECTS AT METAL-SEMICONDUCTOR INTERFACES

被引：42

作者：

LUDEKE, R

JEZEQUEL, G

TALEBIBRAHIMI, A

机构：

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 61卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.61.601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：601 / 604

页数：4

共 33 条

[1] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J].

ALLEN, RE ;

DOW, JD .

PHYSICAL REVIEW B, 1982, 25 (02) :1423-1426

[2] THEORY OF ELECTRONIC CONFIGURATION OF A METALLIC SURFACE-ADSORBATE SYSTEM [J].

BENNETT, AJ ;

FALICOV, LM .

PHYSICAL REVIEW, 1966, 151 (02) :512-&

[3] DEFECT STATES DOMINATED BY LOCALIZED POTENTIALS IN SEMICONDUCTORS [J].

BRAND, S ;

JAROS, M ;

RODRIGUEZ, CO .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (09) :1243-1253

[4] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J].

CAO, R ;

MIYANO, K ;

KENDELEWICZ, T ;

CHIN, KK ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :998-1002

[5] A MICROSCOPIC MODEL OF METAL-SEMICONDUCTOR CONTACTS [J].

DUKE, CB ;

MAILHIOT, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1170-1177

[6] WORK FUNCTION MEASUREMENTS ON (100) AND (110) SURFACES OF SILVER [J].

DWEYDARI, AW ;

MEE, CHB .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (01) :223-230

[7] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].

FREEOUF, JL ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729

[8] THEORY OF ATOM-METAL INTERACTIONS .I. ALKALI ATOM ADSORPTION [J].

GADZUK, JW .

SURFACE SCIENCE, 1967, 6 (02) :133-&

[9] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

[10] TRANSITION-METALS ON GAAS(110) - A CASE FOR EXTRINSIC SURFACE-STATES [J].

HUGHES, G ;

LUDEKE, R ;

SCHAFFLER, F ;

RIEGER, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :924-930

← 1 2 3 4 →