EFFECT OF ELECTRODE SPACING ON THE EQUIVALENT BASE RESISTANCE OF POINT-CONTACT TRANSISTORS

被引：21

作者：

VALDES, LB

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1952年 / 40卷 / 11期

关键词：

D O I：

10.1109/JRPROC.1952.273975

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1429 / 1434

页数：6

共 5 条

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[3] SINGLE-CRYSTAL GERMANIUM [J].

TEAL, GK ;

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BUEHLER, E .

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[4]

UHLIR A, COMMUNICATION

[5] TRANSISTOR FORMING EFFECTS IN N-TYPE GERMANIUM [J].

VALDES, LB .

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