HIGH-QUALITY 2-DIMENSIONAL ELECTRON-SYSTEM CONFINED IN AN ALAS QUANTUM-WELL

被引：49

作者：

LAY, TS ^{[1
]}

HEREMANS, JJ ^{[1
]}

SUEN, YW ^{[1
]}

SANTOS, MB ^{[1
]}

HIRAKAWA, K ^{[1
]}

SHAYEGAN, M ^{[1
]}

ZRENNER, A ^{[1
]}

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and characterization of a high-quality two-dimensional electron system in the X-point valley of an AlAs quantum well. The modulation doped structure has a density of n(s) = 2.5 X 10(11) cm-2 and low-temperature mobility mu = 3 X 10(4) cm2/V s. Cyclotron resonance data reveal an effective mass m(c) = 0.46m0, indicating that the X-point conduction valleys with heavy in-plane mass are occupied. In the magnetotransport data, we observe quantum Hall states at consecutive integral Landau-level fillings (nu), implying that the degeneracy of these valleys is lifted. Our data at high magnetic fields show well-developed fractional quantum Hall states at nu = 1/3 and 2/3 with a gap of 1/3DELTA = 1.3K for the nu = 1/3 state at B almost-equal-to 30 T.

引用

页码：3120 / 3122

页数：3

共 17 条

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