NITROGEN AND PHOSPHORUS DOPING IN ZNS LAYERS GROWN BY VAPOR-PHASE EPITAXY ON GAAS SUBSTRATES

被引：5

作者：

ZHANG, S ^{[1
]}

KINTO, H ^{[1
]}

YATABE, T ^{[1
]}

IIDA, S ^{[1
]}

机构：

[1] TECHNOL UNIV NAGAOKA,NAGAOKA 94021,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

TRANSIENT THERMOLUMINESCENCE - VAPOR PHASE EPITAXY;

D O I：

10.1016/0022-0248(90)90745-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

(Edited Abstract)

引用

页码：372 / 376

页数：5

共 11 条

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