VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNS LAYER ON GAAS SUBSTRATE FOR LED APPLICATION

被引：17

作者：

IIDA, S

SUGIMOTO, T

SUZUKI, S

KISHIMOTO, S

YAGI, Y

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(85)90117-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：51 / 56

页数：6

共 14 条

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[5] VAPOR-PHASE DEPOSITION OF THICK EPITAXIAL (100) ZNS LAYERS ON ELEMENTAL AND COMPOUND SUBSTRATES IN H2 GAS-FLOW [J].

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[6] EPITAXIAL-GROWTH OF ZNS ON GAP BY ZN-S-H-2 CVD METHOD [J].

MATSUMOTO, T ;

MORITA, T ;

ISHIDA, T .

JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) :225-233

[7] A NEW METHOD FOR THE CHARACTERIZATION OF TRAPS IN LUMINESCENT MATERIALS [J].

NAKAZAWA, E .

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[8]

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[9] NATURE OF LUMINESCENCE TRANSITIONS IN ZNS CRYSTALS [J].

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ERA, K ;

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FUJIWARA, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (07) :1157-&

[10] ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES [J].

STUTIUS, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :656-658

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