THE PROPERTIES OF GERMANIUM PHOTOTRANSISTORS

被引:18
作者
SHIVE, JN
机构
关键词
D O I
10.1364/JOSA.43.000239
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:239 / 244
页数:6
相关论文
共 9 条
[1]   THEORY AND EXPERIMENT FOR A GERMANIUM P-N JUNCTION [J].
GOUCHER, FS ;
PEARSON, GL ;
SPARKS, M ;
TEAL, GK ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1951, 81 (04) :637-638
[2]   MEASUREMENT OF HOLE DIFFUSION IN N-TYPE GERMANIUM [J].
GOUCHER, FS .
PHYSICAL REVIEW, 1951, 81 (03) :475-475
[3]   THE PHOTON YIELD OF ELECTRON-HOLE PAIRS IN GERMANIUM [J].
GOUCHER, FS .
PHYSICAL REVIEW, 1950, 78 (06) :816-816
[4]  
SHIVE JN, 1950, BELL LABS RECORD, V25, P289
[5]   P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W ;
SPARKS, M ;
TEAL, GK .
PHYSICAL REVIEW, 1951, 83 (01) :151-162
[6]   THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489
[7]  
SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, pCH12
[8]   CURRENT MULTIPLICATION IN THE TYPE-A TRANSISTOR [J].
SITTNER, WR .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (04) :448-454
[9]   TRANSISTOR FORMING EFFECTS IN N-TYPE GERMANIUM [J].
VALDES, LB .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (04) :445-448