ANALYSIS OF HYDROGEN IN LOW-PRESSURE DIAMOND LAYERS

被引：9

作者：

WAGNER, W ^{[1
]}

RAUCH, F ^{[1
]}

HAUBNER, R ^{[1
]}

LUX, B ^{[1
]}

机构：

[1] TECH UNIV VIENNA,INST CHEM TECHNOL INORGAN MAT,A-1060 VIENNA,AUSTRIA

来源：

THIN SOLID FILMS | 1992年 / 207卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90095-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The hydrogen concentration of diamond layers produced by a low pressure chemical vapour deposition method on SiAlON substrates has been determined by means of the N-15 nuclear reaction analysis technique. The results show distinct differences in the hydrogen content which depend on the gas pressure and on the acetone-hydrogen gas mixture used in the deposition. The resulting diamond morphology is found to be related to the hydrogen content, well-faceted layers containing about 0.2-0.9 at.% H, and balas-type layers with about 1.4 at.% H. Contrary to expection, no relation between the crystal size in the well-faceted layers and the average hydrogen content was found. Additional Rutherford backscattering measurements revealed a high purity of the films with respect to elements heavier than carbon.

引用

页码：24 / 28

页数：5

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