WAVE-GUIDES;
NONLINEAR OPTICS;
SEMICONDUCTOR DEVICES AND MATERIALS;
D O I:
10.1049/el:19910907
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
For the first time, the all-optical refractive nonlinearity due to photogenerated carriers in an InGaAs/InGaAsP quantum well waveguide under various bias conditions is measured. With no bias, the nonlinearity has a slow recovery time, of the order of the recombination time of the carriers. For a coupled power of 4.3 W and a 600-mu-m long device, we measure a phase modulation of 7.5 +/- 2 radians. Under forward bias the nonlinearity is effectively quenched. Under reverse bias the nonlinearity remains, although slightly reduced. In the latter case the recovery time is dramatically reduced to approximately 50 ps.