DEEP LEVELS IN SI-IMPLANTED AND THERMALLY ANNEALED SEMI-INSULATING GAAS-CR

被引：12

作者：

RHEE, JK ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

KOYAMA, RY ^{[1
]}

机构：

[1] TEKTRONIX INC,BEAVERTON,OR 97077

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.330989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3311 / 3313

页数：3

共 17 条

[1]

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[2]

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[3]

BHATTACHARYA PK, UNPUB J APPL PHYS

[4]

CHANG CD, 1980, P C SEMIINSULATING 3, P329

[5]

CROSSLEY I, 1977, 6TH P INT S GALL ARS, P289

[6] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J].

EDEN, RC ;

WELCH, BM ;

ZUCCA, R ;

LONG, SI .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :221-239

[7]

FORBES L, 1979, P IEEE GAAS IC S

[8] LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION [J].

HIGGINS, JA ;

KUVAS, RL ;

EISEN, FH ;

CHEN, DR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :587-596

[9]

HIGGINS JA, 1977, 6TH P INT S GALL ARS, P236

[10] EFFECTS OF ION-IMPLANTATION ON DEEP LEVELS IN GAAS [J].

JERVIS, TR ;

WOODARD, DW ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1979, 15 (20) :619-621

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