POSITRON-ANNIHILATION AND HALL-EFFECT IN ELECTRON-IRRADIATED N-INP CRYSTALS

被引：18

作者：

BRUDNYI, VN ^{[1
]}

VOROBIEV, SA ^{[1
]}

TSOI, AA ^{[1
]}

机构：

[1] SM KIROV POLYTECH INST,INST NUCL PHYS,TOMSK,USSR

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1007/BF00615071

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：219 / 223

页数：5

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